0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 2SA812 absolute maximum ratings ta = 25 parameter symbol rating unit collector to base voltage v cbo -60 v collector to emitter voltage v ceo -50 v emitter to base voltage v ebo -5.0 v collector current (dc) i c -100 ma power dissipation p c 200 mw junction temperature t j 150 storage temperature range t stg -55 to +150 h fe classification marking m4 m5 m6 m7 h fe 90 180 135 270 200 400 300 600 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =-60v,i e =0a -0.1 a emitter cutoff current i ebo v eb =-5.0v,i c =0a -0.1 a dc current gain * h fe v ce =-6.0v,i c = -1.0 ma 90 200 600 collector saturation voltage v ce(sat) i c = -100 ma, i b = -10 ma -0.18 -0.3 v base to emitter voltage v be v ce =6.0v,i c = -1.0 ma -0.58 -0.62 -0.68 v output capacitance c ob v ce =-10v,i e = 0 a, f = 1.0 mhz 4.5 pf transition frequency f t v ce =-6.0v,i e = 10 ma 180 mhz * pulsed: pw 350 s, duty cycle 2% features high dc current gain: h fe = 200 typ. (v ce =-6.0v,i c =-1.0ma) high voltage: v ceo =-50v product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
typical characteristics fig.1 total power dissipation vs. ambient temperature fig.2 collector current vs. base to emitter voltage fig.3 collector current vs. collector to emitter voltage fig.4 collector current vs. collector to emiiter voltage fig.5 base and collector saturation voltage vs. collector current fig.6 dc current gain vs. collector current 2SA812 product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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